Path to Sovereign Semiconductor Manufacturing

Dmitry Andreev was born and lives in Moscow, Russia. He graduated from the Moscow Aviation Institute in 2004 with a degree in Hydroaerodynamics. His career began as a manager and rose to deputy manager of a bank's operations office. Then, in 2020, he joined Lassard, a company specializing in laser technology and machine tool manufacturing. Where he currently serves as Commercial Director. Under his leadership, the company has created an extensive network of regional offices and technical service centers covering all of Russia. Over the years, Andreev has established himself as a highly professional manager, engineer, and production manager, whose work is aimed at strengthening the country's industrial potential and developing high-tech sector. Thanks to Andreev's efforts, more than 150 industrial enterprises in the Russian Federation have increased the efficiency and productivity of their production lines by implementing modern domestic laser cutting machines developed and manufactured in Moscow.

Dr Anatoly Kovalev is a general director of JSC “Zelenograd Nanotechnologies Center” - Russian full-sycle microelectronic company. Anatoly began his carrier in 1987. In 2010 he was appointed JSC ZNTC general director. Anatoly led strategic investment products in the field of microelectronic technologies, electronic components and microelectronic equipment.

Since 2022, he has been developing microelectronics equipment at JSC NIITM, where he leads projects focused on semiconductor wafer processing equipment. Previously, he spent eight years working as a process engineer in microchip manufacturing (CMOS and MEMS). Has Master’s degree in Engineering and Technology and completed his postgraduate studies at the Moscow Institute of Electronic Technology. Author of over ten scientific papers.

Aleksei Efimov received his M.E. and Ph.D. degrees in materials science from MIPT, Russia, in 2010 and 2013. Since 2010, he has been conducting research in aerosol science and technology, authoring over 70 publications and holding 10 patents. Since 2022, he heads the Laboratory of Printed and Silicon Microelectronics at MIPT, leading R&D in additive equipment, technologies, and materials for printed electronics.

Radiophysics engineer, graduate of the Radiophysics Department of the Lobachevsky State University of Nizhny Novgorod, completed the MBA program at the Russian Presidential Academy of National Economy and Public Administration as well.

Over 20 years of experience in B2B sales, including 6 years in the electronic components, materials, and equipment microelectronic segment. Specializes in building sales departments, commercial business processes, and incentive systems in technology companies.

Responsible for the launch and improvement of several product lines: plasma material processing equipment, automated semiconductor wafer loading and unloading systems, semiconductor and sapphire wafer inspection systems, as well as plasma processing equipment for contact lenses and dentures.

Managed GN Group's participation in key industry events: the Photonics and Expo Electronica exhibitions (Moscow, 2022–2026), the Microelectronics forum (2022–2026), and the Electronic Engineering conference (2024–2026).

Continuously interacts with leading enterprises and research institutes in the microelectronics industry. Participates in microelectronics equipment development and production projects as an internal customer, facilitating the connection between market requirements and engineering solutions.

Denis Varlamov was born in 1981. In 2004, he graduated with honors from the Ogarev Mordovia State University, majoring in Chemistry. Since 2005, he has been working in the Russian microelectronics industry, including more than 10 years at JSC "MERI" (Research Institute of Molecular Electronics), a leading microelectronics enterprise. He has extensive experience in the commissioning and qualification of chemical distribution and delivery systems for microelectronic fabrication plants (fabs). Throughout his career, he has independently developed and led the R&D projects for a range of specialized materials for microelectronics with 180–90 nm technology nodes. As part of this work, he designed the equipment for producing selective etchants and metal-free developers, and developed the manufacturing technologies for these materials. Based on these developed technologies, liquid chemical materials suitable for the production of integrated circuits with 180–90 nm process nodes were obtained for the first time in Russia. He is a co-author of more than 10 scientific publications and 4 patents in the field of specialized materials development for microelectronics.